The unique properties of graphene arise from its 2D structure but, in real applications, it cannot stand alone without a support. In this study, large-area, low-defect-density supported graphene is obtained by sublimation of silicon carbide (SiC). Employing polycrystalline SiC we compare graphene simultaneously grown on different facets at exactly the same conditions. We provide a reliable methodology to prepare continuous graphene on SiC components for scaling-up at low cost with controlled thickness, quality and stresses.

Face dependent footprints of carpet-like graphene films grown on polycrystalline silicon carbide.
Cristina Ramírez, Eugenio García, Esther Barrena, Angel De Pablos, Manuel Belmonte, M. Isabel Osendi, Pilar Miranzo, Carmen Ocal
Carbon 153, 417-427, 2019
DOI: 10.1016/j.carbon.2019.07.031

Figure: Combination of different local probe and electron microscopies (SFM, KPFM,  RAMAN, FESEM images) as well as micro-Raman spectroscopy (purple spectrum) used to determine the dependence of the properties of graphene grown simultaneously on different facets of SiC.

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