Ferroelectric capacitors with epitaxial Hf0.5Zr0.5O2, integrated on Si(001) are reported for the first time, showing a remnant polarization around 20 μC/cm2, and high endurance and retention. The low films roughness and their improved insulating properties makes epitaxial Hf0.5Zr0.5O2 ideal for being integrated in ferroelectric-based devices.

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
Jike Lyu, Ignasi Fina, Josep Fontcuberta, Florencio Sánchez
ACS Applied Materials & Interfaces 11, 6, 6224–6229, 2019
DOI: 10.1021/acsami.8b18762

Figure: Sketch of the ferroelectric capacitor (left) and polarization retention after poling with voltage pulses of indicated amplitude (right).

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