Complementary resistive switching using metal-ferroelectric-metal tunnel junctions
Mengdi Qian, Ignasi Fina, Milena C. Sulzbach, Florencio Sánchez, Josep Fontcuberta
Small 15, 1805042, 2019
Figure: Intensity-Voltage (I-V) characteristics of back-to-back series connection of ferroelectric resistive switching device. Top-left: sketch of the used back-to-back series connection. The device resistance at remanence is always high, but the two ferroelectric devices connected show different polarization up-down or down-up states corresponding to different logic states.