This study reports on a robust physical mechanism governing a field-induced volume resistive switching in metallic La1−xSrxMnO3−y perovskites, displaying a metal insulator transition. We show that oxygen migration can be smartly engineered by introducing a CeO2−x capping layer, acting as oxygen reservoir, which is used to validate the phenomenon as a proof-of-concept three-terminal (3-T) device.

Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3-Terminal Devices
Juan Carlos Gonzalez-Rosillo, Rafael Ortega-Hernandez, Benedikt Arndt, Mariona Coll, Regina Dittmann, Xavier Obradors, Anna Palau, Jordi Suñe, Teresa Puig
Advanced Electronic Materials 1800629 (1-8), 2019
DOI: 10.1002/aelm.201800629

Figure: (a) Oxygen ion exchange mechanism between the La0.8Sr0.2MnO3 and the CeO2−x layers proposed to describe the field-induced resistive switching phenomenon. (b) Scheme of the 3-T device. The red region under the gate electrode indicates the active switching region. (c) Cycle evolution of High and Low resistance states in the 3-T device.

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