Scientist in charge: M. Isabel Alonso

Scientific & Technical Services

Molecular Beam Epitaxy (MBE)

The Laboratory of MBE (L-MBE) is a scientific service developing its own research and supporting the research of other groups based on group IV semiconductor heterostructures.

Scientific equipment available

Ultra-high vacuum (UHV) chamber to deposit type IV (Si, Ge) semiconductors by evaporation. C, B, Sb available for doping. Deposition is done in a variety of substrates compatible with UHV, usually heated single-crystal wafers of Si (or SOI).

Use of the Service in 2019

The L-MBE is always operated in self-service mode backed up by the expert users, Dr. M. Garriga and Dr. M. I. Alonso. In 2019 it was employed for research tasks in two different projects of the “NANOPTO” group, led by IPs Dr. M. Campoy-Quiles (Dr. V. Belova used 70% of the time for research in nanostructures to use for hybrid thermoelectrics) and Dr. A. R. Goñi (with 30% of the time devoted to research of structures for harvesting of infrared solar energy).

Outreach, publications and projects in which the service has participated

The Service participated in the joint workshop of all services organized in 28 October 2019 presenting one poster. The service is included in the NFFA Project.

Coordination
Anna May-Masnou This email address is being protected from spambots. You need JavaScript enabled to view it.
Redaction
Anna May-Masnou This email address is being protected from spambots. You need JavaScript enabled to view it.
Web & Graphic Editor
José Antonio Gómez  This email address is being protected from spambots. You need JavaScript enabled to view it.

Webmasters
José Antonio Gómez This email address is being protected from spambots. You need JavaScript enabled to view it.
Albert Moreno     This email address is being protected from spambots. You need JavaScript enabled to view it.
ICMAB