Ultra-high vacuum (UHV) chamber to deposit type IV (Si, Ge) semiconductors by evaporation. C, B, Sb available for doping. Deposition is done in a variety of substrates compatible with UHV, usually heated single-crystal wafers of Si (or SOI).
The L-MBE is always operated in self-service mode backed up by the expert users, Dr. M. Garriga and Dr. M. I. Alonso. In 2019 it was employed for research tasks in two different projects of the “NANOPTO” group, led by IPs Dr. M. Campoy-Quiles (Dr. V. Belova used 70% of the time for research in nanostructures to use for hybrid thermoelectrics) and Dr. A. R. Goñi (with 30% of the time devoted to research of structures for harvesting of infrared solar energy).
The Service participated in the joint workshop of all services organized in 28 October 2019 presenting one poster. The service is included in the NFFA Project.